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1N5831R датащи(PDF) 1 Page - GeneSiC Semiconductor, Inc.

номер детали 1N5831R
подробное описание детали  Not ESD Sensitive
Download  3 Pages
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производитель  GENESIC [GeneSiC Semiconductor, Inc.]
домашняя страница  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N5831R датащи(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  1N5831R Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. 1N5831R Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. 1N5831R Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 20 V - 40 V
IF = 25 A
Features
• High Surge Capability
DO-4 Package
• Types up to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
RMS reverse voltage
VRMS
V
DC blocking voltage
VDC
V
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
20
35
25
35
25
20
14
Conditions
1N5829 (R)
1N5830 (R)
1N5831 (R)
25
17
1N5829 thru 1N5831R
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottky Diode
DC blocking voltage
VDC
V
Continuous forward current
IF
A
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
RthJC
°C/W
1.8
25
25
25
800
800
800
35
0.58
0.58
-55 to 150
-55 to 150
250
25
20
-55 to 150
-55 to 150
-55 to 150
-55 to 150
2
1N5831 (R)
0.58
22
1N5829 (R)
1N5830 (R)
1.8
1.8
VR = 20 V, Tj = 125 °C
250
250
A
mA
V
TC = 25 °C, tp = 8.3 ms
TC ≤ 100 °C
Conditions
VR = 20 V, Tj = 25 °C
IF = 25 A, Tj = 25 °C
Reverse current
IR
VF
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1


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