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74HCT2G14GW датащи(PDF) 2 Page - NXP Semiconductors |
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74HCT2G14GW датащи(HTML) 2 Page - NXP Semiconductors |
2 / 17 page 2003 May 1 2 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 FEATURES • Wide supply voltage range from 2.0 to 6.0 V • High noise immunity • Low power dissipation • Balanced propagation delays • Unlimited input rise and fall times • Very small 6 pins package. APPLICATIONS • Wave and pulse shapers for highly noisy environments • Astable multivibrators • Monostable multivibrators • Output capability: standard. DESCRIPTION The 74HC2G/HCT2G14 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G14 provides two inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC2G the condition is VI = GND to VCC. For HCT2G the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. Note 1. H = HIGH voltage level; L = LOW voltage level. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC2G HCT2G tPHL/tPLH propagation delay nA to nY CL = 50 pF; VCC = 4.5 V 16 21 ns CI input capacitance 2 2 pF CPD power dissipation capacitance notes 1 and 2 10 10 pF INPUTS OUTPUTS nA nY LH HL |
Аналогичный номер детали - 74HCT2G14GW |
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Аналогичное описание - 74HCT2G14GW |
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