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LM363H-500 датащи(PDF) 3 Page - National Semiconductor (TI) |
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LM363H-500 датащи(HTML) 3 Page - National Semiconductor (TI) |
3 / 22 page LM363 Electrical Characteristics (Continued) (Notes 1 and 2) LM363 Parameter Conditions Tested Design Units Typ Limit Limit (Note 3) (Note 4) Common-Mode Rejection Ge1000 500 130 114 104 dB Ratio (b10VsVCMs10V) Ge100 120 94 84 dB Ge10 105 90 80 dB Positive Supply Rejection Ge1000 500 130 110 100 dB Ratio (5V to 15V) Ge100 120 100 95 dB Ge10 100 85 78 dB Negative Supply Rejection Ge1000 500 120 100 90 dB Ratio (b5V to b15V) Ge100 106 85 75 dB Ge10 86 70 60 dB Input Bias Current 2 10 20 nA Input Offset Current 1 3 5 nA Common-Mode Input 100 8 GX Resistance Differential Mode Input Ge1000 500 02 GX Resistance Ge100 2 GX Ge10 20 GX Input Offset Current Change b 11VsVCMs13V 20 100 300 paV Reference and Sense 50 kX Resistance Min 30 27 kX Max 80 83 kX Open Loop Gain GCLe1000 500 10 1 V mV Supply Current Positive 12 24 30 mA Negative 16 28 34 mA Note 1 These conditions apply unless otherwise noted Va e15V Vbeb15V VCMe0V RLe2kX reference pin grounded sense pin connected to output and Tje25 C Note 2 Boldface limits are guaranteed over full temperature range Operating ambient temperature range is 0 Cto70 C for the LM363 Note 3 Guaranteed and 100% production tested Note 4 Guaranteed but not 100% tested These limits are not used in determining outgoing quality levels Note 5 Maximum rated junction temperature is 100 C for the LM363 Thermal resistance junction to ambient is 150 CW for the TO-99(H) package and 100 CW for the ceramic DIP (D) 3 |
Аналогичный номер детали - LM363H-500 |
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Аналогичное описание - LM363H-500 |
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