SMMUN2216LT1G datasheet(3/11 Pages) ONSEMI

номер детали	SMMUN2216LT1G

подробное описание детали	Digital Transistors (BRT)

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MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3

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Table 2. THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

THERMAL CHARACTERISTICS (SC−59) (MUN2216)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25

°C

(Note 1)

(Note 2)

PD

230

338

1.8

2.7

mW

mW/

°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

540

370

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

264

287

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SOT−23) (MMUN2216L)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25

°C

(Note 1)

(Note 2)

PD

246

400

2.0

3.2

mW

mW/

°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

508

311

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

174

208

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5216)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25

°C

(Note 1)

(Note 2)

PD

202

310

1.6

2.5

mW

mW/

°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

618

403

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

280

332

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−75) (DTC143TE)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25

°C

(Note 1)

(Note 2)

PD

200

300

1.6

2.4

mW

mW/

°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

600

400

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SOT−723) (DTC143TM3)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25

°C

(Note 1)

(Note 2)

PD

260

600

2.0

4.8

mW

mW/

°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

480

205

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Аналогичный номер детали - SMMUN2216LT1G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	SMMUN2216LT1G	128Kb / 10P	Digital Transistors (BRT) R1 = 4.7 k, R2 = k February, 2013 ??Rev. 1
ON Semiconductor	SMMUN2216LT1G	137Kb / 11P	NPN Transistors with Monolithic Bias Resistor Network February, 2013 ??Rev. 1

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Аналогичное описание - SMMUN2216LT1G

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