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TC215-30 датащи(PDF) 1 Page - Texas Instruments |
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TC215-30 датащи(HTML) 1 Page - Texas Instruments |
1 / 19 page TC215 1024- × 1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 1989 – REVISED DECEMBER 1991 Copyright © 1991, Texas Instruments Incorporated 2-1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 • High-Resolution, Solid-State Frame-Transfer Image Sensor • 17.2-mm Image-Area Diagonal • 1000 (H) x 1018 (V) Active Elements in Image-Sensing Area • Square Pixels • Low Dark Current • Electron-Hole Recombination Antiblooming • Dynamic Range . . . More Than 60 dB • High Sensitivity • High Photoresponse Uniformity • High Blue Response • Single-Phase Clocking • Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics description The TC215 is a full-frame charge-coupled-device (CCD) image sensor that provides very high-resolution image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The image format measures 12 mm horizontally by 12.216 mm vertically; the image-area diagonal is 17.2 mm. The image-area pixels are 12- µm square. The image area contains 1018 active lines with 1000 active pixels per line. Six additional dark reference lines give a total of 1024 lines in the image area, and 24 additional dark reference pixels per line give a total of 1024 pixels per horizontal line. The full-frame image sensor should be used with a shutter or with strobed illumination to prevent smearing of the image during readout. To prepare the imaging area for image capture, the photoelectric charge that has accumulated in the image pixels can be transferred into the clearing drain in one millisecond. After image capture (integration time), the readout is accomplished by transferring the charge, one line at a time, into two serial registers, each of which contains 512 data elements and 12 dummy elements. The typical serial-register clocking rate is 10 megapixels per second. Operating the TC215 at the typical data rate of one field per frame generates video output at a continuous 15 frames per second. Gated floating-diffusion detection structures are used with each serial register to convert charge to signal voltage. External reset allows the application of off-chip correlated clamp sample-and-hold amplifiers for low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise, two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per second when combined off chip. At room temperature, the readout noise is 55 electrons and a minimum dynamic range of 60 dB is available. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. TRG SRG2 SRG1 CDB RST1 RST2 SUB ADB OUT2 AMP GND OUT1 IAG2 ABG1 IAG1 SUB SUB TDB SUB IAG1 ABG1 IAG2 ABG2 24 23 22 21 20 19 18 17 16 15 11 10 9 8 7 6 5 4 3 2 1 DUAL-IN-LINE PACKAGE (TOP VIEW) IDB ABG2 13 12 14 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - TC215-30 |
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Аналогичное описание - TC215-30 |
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