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TPC8108 датащи(PDF) 6 Page - Toshiba Semiconductor

номер детали TPC8108
подробное описание детали  Silicon P Channel MOS Type (U-MOSIII)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8108 датащи(HTML) 6 Page - Toshiba Semiconductor

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TPC8108
2002-03-12
6
Drain-source voltage VDS (V)
Safe operating area
Pulse width tw (S)
rth − tw
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
Single pulse
(2)
(1)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
Device mounted on a glass-epoxy board (b)
(Note 2b)
t
= 10 s
(1)
−0.01
−1
−0.1
−10
−100
−0.01
−0.1
−1
−10
−100
*
Single pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
10 ms*
1 ms*
VDSS max


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