SS12T3 datasheet(2/5 Pages) ONSEMI

номер детали	SS12T3

подробное описание детали	NPN Transistor

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NSS12201LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

12

−

Vdc

Collector−Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

12

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 12 Vdc, IE = 0)

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc)

IEBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

hFE

200

−

330

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 0.1 A, IB = 0.01 A)

(IC = 1.0 A, IB = 0.100 A)

(IC = 1.0 A, IB = 0.010 A)

(IC = 2.0 A, IB = 0.2 A)

VCE(sat)

−

0.003

0.035

0.053

0.068

0.008

0.050

0.080

0.090

V

Base −Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 10 mA)

VBE(sat)

−

0.760

0.900

V

Base −Emitter Turn−on Voltage (Note 3)

(IC = 1.0 A, VCE = 2.0 V)

VBE(on)

−

0.750

0.900

V

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)

fT

150

−

MHz

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)

Cibo

−

450

pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)

Cobo

−

75

pF

SWITCHING CHARACTERISTICS

Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)

td

−

100

ns

Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)

tr

−

100

ns

Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)

ts

−

350

ns

Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)

tf

−

110

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

Аналогичный номер детали - SS12T3

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	SS12T3	63Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
	SS12T3	86Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor April, 2008 - Rev. 0
	SS12T3	64Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
	SS12T3	87Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor September, 2007 - Rev. 0
	SS12T3	58Kb / 4P	Power MOSFET 170 mAmps, 100 Volts March, 2005 ??Rev. 5

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