BCW33LT1G_16 datasheet(2/6 Pages) ONSEMI

номер детали	BCW33LT1G

подробное описание детали	General Purpose Transistor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO

32

−

Vdc

Collector − Base Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CBO

32

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 32 Vdc, IE = 0)

(VCB = 32 Vdc, IE = 0, TA = 100°C)

ICBO

−

100

10

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE

420

800

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

VCE(sat)

−

0.25

Vdc

Base − Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

0.55

0.70

Vdc

SMALL− SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.0

pF

Noise Figure

(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

EQUIVALENT SWITCHING TIME TEST CIRCUITS

*Total shunt capacitance of test jig and connectors

10 k

+3.0 V

275

CS < 4.0 pF*

10 k

+3.0 V

275

CS < 4.0 pF*

1N916

300 ns

DUTY CYCLE = 2%

+10.9 V

-0.5 V

<1.0 ns

10 < t1 < 500 ms

DUTY CYCLE = 2%

+10.9 V

0

-9.1 V

< 1.0 ns

t1

Аналогичный номер детали - BCW33LT1G_16

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BCW33LT1G	262Kb / 6P	General Purpose Transistor August, 2009 ??Rev. 4

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