BC817-40W_16 datasheet(2/5 Pages) ONSEMI

номер детали	BC817-40W

подробное описание детали	General Purpose NPN Transistor

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BC817−40W

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mA)

V(VR)CEO

45

−

V

Collector − Emitter Breakdown Voltage

(VEB = 0 V, IC = 10 mA)

V(VR)CES

50

−

V

Emitter − Base Breakdown Voltage

(IE = 1.0 mA)

V(VR)EBO

5.0

−

V

Collector Cutoff Current

(VCB = 20 V)

(VCB = 20 V, TA = 150°C)

ICBO

−

100

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain (Note 2)

(IC = 100 mA, VCE = 1.0 V)

(IC = 500 mA, VCE = 1.0 V)

hFE

250

40

−

600

−

Collector − Emitter Saturation Voltage (Note 2)

(IC = 500 mA, IB = 50 mA)

VCE(sat)

−

0.7

V

Base − Emitter On Voltage (Note 2)

(IC = 500 mA, VCE = 1.0 V)

VBE(on)

−

1.2

V

SMALL− SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

10

−

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%

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