BC847BPDW1 datasheet(8/17 Pages) ONSEMI

номер детали	BC847BPDW1

подробное описание детали	Dual General Purpose Transistors

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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series

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8

TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES

Figure 17. DC Current Gain vs. Collector

Current

Figure 18. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

100

200

300

400

500

0.1

0.01

0.001

0.0001

0

0.05

0.10

0.15

0.20

0.25

0.30

Figure 19. Base Emitter Saturation Voltage vs.

Collector Current

Figure 20. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

VCE = 5 V

150

°C

−55

°C

25

°C

IC/IB = 20

150

°C

−55

°C

25

°C

0.4

0.9

IC/IB = 20

150

°C

−55

°C

25

°C

VCE = 5 V

150

°C

−55

°C

25

°C

0.4

0.7

1.1

1.0

Figure 21. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 22. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

1.0

10

100

-55

°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Аналогичный номер детали - BC847BPDW1

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BC847BPDW1	178Kb / 17P	Dual General Purpose Transistors October, 2013 ??Rev. 9
	BC847BPDW1T1	166Kb / 10P	Dual General Purpose Transistors(NPN/PNP Duals) June, 2004 ??Rev. 3
	BC847BPDW1T1G	166Kb / 10P	Dual General Purpose Transistors(NPN/PNP Duals) June, 2004 ??Rev. 3
	BC847BPDW1T1G	172Kb / 17P	Dual General Purpose Transistors October, 2010 ??Rev. 6
	BC847BPDW1T1G	178Kb / 17P	Dual General Purpose Transistors October, 2013 ??Rev. 9

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