MJE350G datasheet(2/3 Pages) ONSEMI

номер детали	MJE350G

подробное описание детали	Plastic Medium-Power PNP Silicon Transistor

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MJE350G

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2

IC, COLLECTOR CURRENT (mA)

200

7.0

20

5.0

50

30

10

50

100

30

25

°C

TJ = 150°C

-55

°C

Figure 1. DC Current Gain

100

20

70

200

500

300

70

VCE = 2.0 V

VCC = 10 V

Figure 2. “On” Voltages

1.0

IC, COLLECTOR CURRENT (mA)

0.8

0.2

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

0.6

0.4

VCE(sat)

7.0

20

5.0

10

50

100

30

200

500

300

70

IC/IB = 10

IC/IB = 5.0

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

70

300

10

50

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

SECOND BREAKDOWN LIMITED

Figure 3. Active−Region Safe Operating Area

1.0ms

dc

700

200

100

50

20

TJ = 150°C

100

300

500

30

100

ms

400

30

70

200

20

500

ms

+1.2

IC, COLLECTOR CURRENT (mA)

70

Figure 4. Temperature Coefficients

50

30

10

5.0

500

7.0

20

+0.8

+0.4

0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

100

200 300

*APPLIES FOR IC/IB < hFE/4

*

qVC for VCE(sat)

qVB for VBE

+100

°C to +150°C

+25

°C to +100°C

-55

°C to +25°C

+25

°C to +150°C

-55

°C to +25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150

_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

20

TC, CASE TEMPERATURE (°C)

Figure 5. Power Derating

100

80

40

0

160

20

60

16

12

8.0

4.0

0

120

140

Аналогичный номер детали - MJE350G

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ON Semiconductor	MJE350G	139Kb / 3P	Plastic Medium Power PNP Silicon Transistor January, 2007 ??Rev. 14

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Аналогичное описание - MJE350G

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ON Semiconductor	BD136	42Kb / 4P	Plastic Medium Power Silicon PNP Transistor April, 2005 ??Rev. 12
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