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BAT54CLT1G датащи(PDF) 2 Page - ON Semiconductor

номер детали BAT54CLT1G
подробное описание детали  Dual Common Cathode Schottky Barrier Diodes
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
0.5
2.0
mA
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
5.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k
W variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V
2 k
820
W
0.1
mF
DUT
VR
100
mH
0.1
mF
50
W OUTPUT
PULSE
GENERATOR
50
W INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
T
10%
90%
IF
IR
trr
T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit


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