Si7972DP

www.vishay.com

Vishay Siliconix

S16-1448-Rev. A, 25-Jul-16

1

Document Number: 75360

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual N-Channel 30 V (D-S) MOSFET

Ordering Information:

Si7972DP-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• PWM optimized

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• System power DC/DC

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

60

8

7.1

8

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

2

4

1

S

1

2

G

1

3

S

2

D

1

8

D

2

6

D

1

7

D

2

5

N-Channel MOSFET

N-Channel MOSFET

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current

40

Source-Drain Current Diode Current

19

Maximum Power Dissipation

22

W

14

Operating Junction and Storage Temperature Range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

t

 10 s

26

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

45.5