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SI7972DP датащи(PDF) 1 Page - Vishay Siliconix |
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SI7972DP датащи(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Si7972DP www.vishay.com Vishay Siliconix S16-1448-Rev. A, 25-Jul-16 1 Document Number: 75360 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 30 V (D-S) MOSFET Ordering Information: Si7972DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • PWM optimized • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • System power DC/DC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (TYP.) 60 0.018 at VGS = 10 V 8 7.1 0.021 at VGS = 4.5 V 8 PowerPAK® SO-8 Dual Top View 1 6.15 mm 5.15 mm Bottom View 4 G 2 4 1 S 1 2 G 1 3 S 2 D 1 8 D 2 6 D 1 7 D 2 5 D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8 a A TC = 70 °C 8 a TA = 25 °C 8 a TA = 70 °C 8 a Pulsed Drain Current IDM 40 Source-Drain Current Diode Current TC = 25 °C IS 19 TA = 25 °C 3 b, c Maximum Power Dissipation TC = 25 °C PD 22 W TC = 70 °C 14 TA = 25 °C 3.6 b, c TA = 70 °C 2.3 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient b, f t 10 s RthJA 26 35 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 45.5 |
Аналогичный номер детали - SI7972DP |
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Аналогичное описание - SI7972DP |
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