поискавой системы для электроныых деталей |
|
BA783-G датащи(PDF) 2 Page - Vishay Siliconix |
|
BA783-G датащи(HTML) 2 Page - Vishay Siliconix |
2 / 3 page BA782-G, BA783-G www.vishay.com Vishay Semiconductors Rev. 1.1, 14-May-14 2 Document Number: 85240 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Diode Capacitance Fig. 2 - Dynamic Forward Resistance vs. Forward Current PACKAGE DIMENSIONS in millimeters (inches): SOD-123 T j = 25 °C f = 1 MHz 18798 110 0.1 0.8 0.6 0.4 1.4 1.2 1.0 0.2 0 100 VR - Reverse Voltage (V) 2.0 1.8 1.6 1 10 0.1 1 100 10 IF - Forward Current (mA) BA782-G 100 MHz BA783-G 100 MHz BA782-G, BA783-G 1 kHz T amb = 25 °C 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) Mounting Pad Layout 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) Cathode bar 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 |
Аналогичный номер детали - BA783-G |
|
Аналогичное описание - BA783-G |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |