BAS116 datasheet(2/3 Pages) BILIN

номер детали	BAS116

подробное описание детали	Surface mount switching diode

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производитель	BILIN [Galaxy Semi-Conductor Holdings Limited]

домашняя страница	http://www.galaxycn.com

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Production specification

Surface mount switching diode

BAS116

C031

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Min

Typ

MAX

UNIT

Test Condition

Reverse Breakdown Voltage

V(BR)R

85

-

V

IR= 100μA

Forward Voltage

VFM

-

0.9

1.0

1.1

1.25

V

IF=1mA

IF=10mA

IF=50mA

IF=150mA

Reverse Leakage Current

IR

-

5.0

80

nA

VR=75V

VR=75V,Tj=150℃

Junction Capacitance

Cj

-

2

-

pF

VR=0V,f=1.0MHz

Reverse Recovery Time

trr

-

3

ns

IF=IR=10mAIrr=0.1*IR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
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