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Document Number: 62827

S13-0111-Rev. A, 21-Jan-13

Vishay Siliconix

Si2347DS

This document is subject to change without notice.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

°C

T

°C

1.1

1.28

1.46

1.64

1.82

2

- 50

- 25

0

25

50

75

100

125

150

T

°C)

I

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0

0.025

0.05

0.075

0.1

0.125

2

4

6

8

10

V

T

°C

T

°C

I

0

10

20

30

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

V

* V

100 ms

Limited by R

1 ms

T

°C

BVDSS Limited

10 ms

100 μs

10 s, 1 s

DC