SIA466EDJ datasheet(1/9 Pages) VISHAY

номер детали	SIA466EDJ

подробное описание детали	N-Channel 20 V (D-S) MOSFET

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SiA466EDJ

www.vishay.com

Vishay Siliconix

S14-1065-Rev. A, 19-May-14

1

Document Number: 62955

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 20 V (D-S) MOSFET

Marking Code: AW

Ordering Information:

SiA466EDJ-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET® power MOSFET

• Thermally enhanced PowerPAK® SC-70 package

- Small footprint area

- Low on-resistance

• Typical ESD protection: 2500 V (HBM)

• 100 % Rg Tested

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• For smart phones and mobile

computing

- DC/DC converters

- Power management

- Load switches

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) MAX.

ID (A) a

Qg (TYP.)

20

0.0095 at VGS = 10 V

25

6.3 nC

0.0111 at VGS = 6 V

25

0.0130 at VGS = 4.5 V

25

PowerPAK® SC-70-6L Single

3

G

2

D

1

D

S

4

D

5

D

6

S

Bottom View

2.05

mm

1

Top View

N-Channel MOSFET

S

D

G

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C) a

TC = 25 °C

ID

25 a

A

TC = 70 °C

25 a

TA = 25 °C

15.1 b, c

TA = 70 °C

12.1 b, c

Pulsed Drain Current (t = 300 μs)

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

16

TA = 25 °C

2.9 b, c

Maximum Power Dissipation

TC = 25 °C

PD

19.2

W

TC = 70 °C

12.3

TA = 25 °C

3.5 b, c

TA = 70 °C

2.2 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient b, f

t

≤ 5 s

RthJA

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

5.3

6.5

Аналогичный номер детали - SIA466EDJ

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Vishay Telefunken	SIA466EDJ	256Kb / 9P	N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SIA466EDJ	259Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SIA466EDJ

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