поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

SIHP15N65E датащи(PDF) 2 Page - Vishay Siliconix

номер детали SIHP15N65E
подробное описание детали  E Series Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHP15N65E датащи(HTML) 2 Page - Vishay Siliconix

  SIHP15N65E Datasheet HTML 1Page - Vishay Siliconix SIHP15N65E Datasheet HTML 2Page - Vishay Siliconix SIHP15N65E Datasheet HTML 3Page - Vishay Siliconix SIHP15N65E Datasheet HTML 4Page - Vishay Siliconix SIHP15N65E Datasheet HTML 5Page - Vishay Siliconix SIHP15N65E Datasheet HTML 6Page - Vishay Siliconix SIHP15N65E Datasheet HTML 7Page - Vishay Siliconix SIHP15N65E Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
SiHP15N65E
www.vishay.com
Vishay Siliconix
S15-0399-Rev. B, 16-Mar-15
2
Document Number: 91534
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-62
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-0.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
650
-
-
V
VDS Temperature Coefficient
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-0.75
-
V/°C
Gate-Source Threshold Voltage (N)
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
± 1
μA
Zero Gate Voltage Drain Current
IDSS
VDS = 650 V, VGS = 0 V
-
-
1
μA
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
10
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 8 A
-
0.23
0.28
Ω
Forward Transconductance
gfs
VDS = 30 V, ID = 8 A
-
5.6
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
1640
-
pF
Output Capacitance
Coss
-80
-
Reverse Transfer Capacitance
Crss
-4
-
Effective Output Capacitance, Energy
Related a
Co(er)
VDS = 0 V to 520 V, VGS = 0 V
-63
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
213
-
Total Gate Charge
Qg
VGS = 10 V
ID = 8 A, VDS = 520 V
-48
96
nC
Gate-Source Charge
Qgs
-11
-
Gate-Drain Charge
Qgd
-21
-
Turn-On Delay Time
td(on)
VDD = 520 V, ID = 8 A,
VGS = 10 V, Rg = 9.1
Ω
-18
36
ns
Rise Time
tr
-24
48
Turn-Off Delay Time
td(off)
-48
96
Fall Time
tf
-25
50
Gate Input Resistance
Rg
f = 1 MHz, open drain
-
0.8
-
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
15
A
Pulsed Diode Forward Current
ISM
--
38
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 V
-
-
1.2
V
Reverse Recovery Time
trr
TJ = 25 °C, IF = IS = 8 A,
dI/dt = 100 A/μs, VR = 400 V
-
325
-
ns
Reverse Recovery Charge
Qrr
-4.6
-
μC
Reverse Recovery Current
IRRM
-20
-
A
S
D
G


Аналогичный номер детали - SIHP15N65E

производительномер деталидатащиподробное описание детали
logo
Inchange Semiconductor ...
SIHP15N65E ISC-SIHP15N65E Datasheet
328Kb / 2P
   iscN-Channel MOSFET Transistor
logo
Vishay Siliconix
SIHP15N65E-E3 VISHAY-SIHP15N65E-E3 Datasheet
173Kb / 8P
   E Series Power MOSFET
01-Jan-2022
SIHP15N65E-GE3 VISHAY-SIHP15N65E-GE3 Datasheet
173Kb / 8P
   E Series Power MOSFET
01-Jan-2022
SIHP15N65E VISHAY-SIHP15N65E_V01 Datasheet
173Kb / 8P
   E Series Power MOSFET
01-Jan-2022
More results

Аналогичное описание - SIHP15N65E

производительномер деталидатащиподробное описание детали
logo
Vishay Siliconix
SIHP12N50E VISHAY-SIHP12N50E Datasheet
159Kb / 9P
   E Series Power MOSFET
Rev. B, 23-Feb-15
SIHA14N60E VISHAY-SIHA14N60E Datasheet
154Kb / 7P
   E Series Power MOSFET
Rev. B, 15-Aug-16
SIHD14N60E VISHAY-SIHD14N60E Datasheet
136Kb / 7P
   E Series Power MOSFET
Rev. A, 18-Apr-16
SIHW47N60E VISHAY-SIHW47N60E Datasheet
243Kb / 8P
   E Series Power MOSFET
Rev. D, 18-Nov-13
SIHG40N60E VISHAY-SIHG40N60E Datasheet
145Kb / 7P
   E Series Power MOSFET
Rev. A, 18-Apr-16
SIHG47N60AE VISHAY-SIHG47N60AE Datasheet
145Kb / 7P
   E Series Power MOSFET
Rev. A, 04-Jul-16
SIHF12N65E VISHAY-SIHF12N65E Datasheet
148Kb / 7P
   E Series Power MOSFET
Rev. E, 15-Aug-16
SIHJ8N60E VISHAY-SIHJ8N60E Datasheet
224Kb / 11P
   E Series Power MOSFET
Rev. A, 19-Oct-15
SIHB35N60E VISHAY-SIHB35N60E Datasheet
162Kb / 7P
   E Series Power MOSFET
Rev. A, 13-Jun-16
SIHA22N60E VISHAY-SIHA22N60E Datasheet
180Kb / 8P
   E Series Power MOSFET
Rev. F, 15-Aug-16
SIHG47N65E VISHAY-SIHG47N65E Datasheet
157Kb / 7P
   E Series Power MOSFET
Rev. D, 23-Feb-15
More results


Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com