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IRF644S датащи(PDF) 2 Page - Vishay Siliconix |
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IRF644S датащи(HTML) 2 Page - Vishay Siliconix |
2 / 8 page IRF644S, SiHF644S www.vishay.com Vishay Siliconix S16-0754-Rev. D, 02-May-16 2 Document Number: 91040 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Ambient (PCB mount) a RthJA -40 Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 250 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.34 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 μA VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 A b - - 0.28 Forward Transconductance gfs VDS = 50 V, ID = 8.4 A b 6.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - pF Output Capacitance Coss - 330 - Reverse Transfer Capacitance Crss -85 - Total Gate Charge Qg VGS = 10 V ID = 7.9 A, VDS = 200 V, see fig. 6 and 13 b -- 68 nC Gate-Source Charge Qgs -- 11 Gate-Drain Charge Qgd -- 35 Turn-On Delay Time td(on) VDD = 125 V, ID = 7.9 A, Rg = 9.1 , RD = 8.7 , see fig. 10 b -11 - ns Rise Time tr -24 - Turn-Off Delay Time td(off) -53 - Fall Time tf -49 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Gate Input Resistance Rg f = 1 MHz, open drain 0.3 - 1.2 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 14 A Pulsed Diode Forward Current a ISM -- 56 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 V b -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs b - 250 500 ns Body Diode Reverse Recovery Charge Qrr -2.3 4.6 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Аналогичный номер детали - IRF644S |
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Аналогичное описание - IRF644S |
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