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SI7149DP датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI7149DP
подробное описание детали  P-Channel 30-V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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Document Number: 68934
S-82620-Rev. A, 03-Nov-08
Vishay Siliconix
Si7149DP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 32
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
6.0
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 15 A
0.0042
0.0052
Ω
VGS = - 4.5 V, ID = - 10 A
0.0075
0.0094
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 15 A
47
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
4590
pF
Output Capacitance
Coss
795
Reverse Transfer Capacitance
Crss
765
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
98
147
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
51
77
Gate-Source Charge
Qgs
11.7
Gate-Drain Charge
Qgd
25
Gate Resistance
Rg
f = 1 MHz
0.4
2.0
4.0
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
15
30
ns
Rise Time
tr
14
28
Turn-Off DelayTime
td(off)
58
110
Fall Time
tf
16
32
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
79
140
Rise Time
tr
135
220
Turn-Off DelayTime
td(off)
52
100
Fall Time
tf
36
70
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 50
A
Pulse Diode Forward Current
ISM
- 70
Body Diode Voltage
VSD
IS = - 3 A, VGS = 0 V
- 0.72
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
49
90
ns
Body Diode Reverse Recovery Charge
Qrr
47
86
nC
Reverse Recovery Fall Time
ta
22
ns
Reverse Recovery Rise Time
tb
27


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