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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N2412 датащи(PDF) 2 Page - Central Semiconductor Corp |
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2N2412 датащи(HTML) 2 Page - Central Semiconductor Corp |
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2 / 2 page  2N2411 / 2N2412 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N2411 2N2412 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS td VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω 10 10 ns tr VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω 20 20 ns ton VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω 25 25 ns ts IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω 90 90 ns tf IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω 20 20 ns toff IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω 100 100 ns JEDEC TO-18 CASE - MECHANICAL OUTLINE Lead Code: 1) Emitter 2) Base 3) Collector R1 B D C E F LEAD #1 LEAD #2 LEAD #3 G H I J A 45° MIN MAX MIN MAX A (DIA) 0.209 0.230 5.31 5.84 B (DIA) 0.178 0.195 4.52 4.95 C - 0.030 - 0.76 D 0.170 0.210 4.32 5.33 E 0.500 - 12.70 - F (DIA) 0.016 0.019 0.41 0.48 G (DIA) H I 0.036 0.046 0.91 1.17 J 0.028 0.048 0.71 1.22 TO-18 (REV: R1) 0.100 2.54 0.050 1.27 DIMENSIONS SYMBOL INCHES MILLIMETERS |
Аналогичный номер детали - 2N2412 |
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Аналогичное описание - 2N2412 |
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