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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SI5475BDC датащи(PDF) 2 Page - Vishay Siliconix |
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SI5475BDC датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number: 73381 S-83054-Rev. D, 29-Dec-08 Vishay Siliconix Si5475BDC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 7 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 85 °C - 5 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.6 A 0.023 0.028 Ω VGS = - 2.5 V, ID = - 4.7 A 0.032 0.039 VGS = - 1.8 V, ID = - 1.9 A 0.044 0.054 Forward Transconductancea gfs VDS = - 6 V, ID = - 6.9 A 22 S Dynamicb Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 1400 pF Output Capacitance Coss 370 Reverse Transfer Capacitance Crss 260 Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 6 A 26 40 nC VDS = - 6 V, VGS = - 4.5 V, ID = - 6 A 15.5 24 Gate-Source Charge Qgs 2.1 Gate-Drain Charge Qgd 4.0 Gate Resistance Rg f = 1 MHz 9 Ω Turn-On Delay Time td(on) VDD = - 6 V, RL = 0.97 Ω ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω 10 15 ns Rise Time tr 38 60 Turn-Off DelayTime td(off) 62 95 Fall Time tf 70 105 Turn-On Delay Time td(on) VDD = - 6 V, RL = 0.97 Ω ID ≅ - 6.2 A, VGEN = - 8 V, Rg = 1 Ω 510 Rise Time tr 15 25 Turn-Off DelayTime td(off) 65 100 Fall Time tf 72 110 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 5.2 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 6.2 A, VGS = 0 V - 0.9 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C 45 70 ns Body Diode Reverse Recovery Charge Qrr 27 42 nC Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 30 |
Аналогичный номер детали - SI5475BDC |
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Аналогичное описание - SI5475BDC |
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