Vishay Siliconix

SiA813DJ

New Product

Document Number: 70450

S10-0459-Rev. C, 22-Feb-10

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

Plus Schottky Power MOSFET

•

SC-70 Package

- Small Footprint Area

- Low On-Resistance

- Thin 0.75 mm Profile

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Cellular Charger Switch

•

Buck Converter for Portable Devices

•

Load Switch for Portable Devices

PRODUCT SUMMARY

a

- 20

- 4.5

4.9 nC

- 4.5

- 4.5

SCHOTTKY PRODUCT SUMMARY

Diode Forward Voltage

a

20

0.46 at 0.5 A

1

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

- 20

V

Reverse Voltage (Schottky)

20

Gate-Source Voltage (MOSFET)

± 8

A

Pulsed Drain Current (MOSFET)

- 8

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

2

Maximum Power Dissipation (MOSFET)

6.5

W

5

Maximum Power Dissipation (Schottky)

7.3

4.7

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

K

A

S

G

D

P-Channel MOSFET

A

K

G

S

NC

D

1

6

5

4

2

3

2.05 mm

2.05 mm

PowerPAK SC-70-6 Dual

K

D

0.75 mm

Marking Code

X X X

H B X

Lot Traceability

and Date code

Part # code

Ordering Information: SiA813DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)