поискавой системы для электроныых деталей |
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SI8404DB датащи(PDF) 5 Page - Vishay Siliconix |
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SI8404DB датащи(HTML) 5 Page - Vishay Siliconix |
5 / 8 page Document Number: 73518 S-82118-Rev. C, 08-Sep-08 www.vishay.com 5 Vishay Siliconix Si8404DB TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted ** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-foot thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. RDS(on) vs VGS vs Temperature Single Pulse Power, Junction-to-Ambient 012345 ID = 1 A VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.001 0 40 80 60 10 Time (s) 20 0.01 0.1 1 Safe Operating Area, Junction-to-Ambient Power De-Rating VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* TA = 25 °C Single Pulse 0.001 0.1 1 100 10 0.01 0.1 1 10 100 P(t) = 100 ms P(t) = 10s P(t) = 1s DC 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 Case Temperature (°C) Current De-Rating** 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 TF - Foot Temperature (°C) |
Аналогичный номер детали - SI8404DB |
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Аналогичное описание - SI8404DB |
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