MTB012C04Q8-0-T3-G datasheet(3/12 Pages) CYSTEKEC

номер детали	MTB012C04Q8-0-T3-G

подробное описание детали	N- and P-Channel Enhancement Mode MOSFET

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производитель	CYSTEKEC [Cystech Electonics Corp.]

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CYStech Electronics Corp.

Spec. No. : C049Q8

Issued Date : 2017.04.24

Revised Date :

Page No. : 3/12

MTB012C04Q8

CYStek Product Specification

*Qg

-

6.4

-

*Qgs

-

2.4

-

*Qgd

-

2.2

-

nC

VDS=15V, ID=8.3A, VGS=4.5V

Body Diode

*IS

-

2.3

*ISM

-

9.2

A

*VSD

-

0.73

1

V

VGS=0V, IS=1A

*trr

-

10.6

-

ns

*Qrr

-

4.5

-

nC

IF=1A, VGS=0V, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

P-Channel Electrical Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-40

-

VGS=0V, ID=-250μA

VGS(th)

-1.0

-

-2.5

V

VDS=VGS, ID=-250μA

IGSS

-

±100

nA

VGS=±20V, VDS=0V

-

-1

VDS=-32V, VGS=0V

IDSS

-

-25

μA

VDS=-32V, VGS=0V, Tj=125

°C

-

15.4

20

VGS=-10V, ID=-7A

*RDS(ON)

-

18.7

27

m

Ω

VGS=-4.5V, ID=-5A

*GFS

-

14.5

-

S

VDS=-10V, ID=-7A

Dynamic

Ciss

-

2334

-

Coss

-

206

-

Crss

-

124

-

pF

VDS=-15V, VGS=0V, f=1MHz

*td(ON)

-

12

-

*tr

-

20.2

-

*td(OFF)

-

173.2

-

*tf

-

62

-

ns

VDS=-15V, ID=-1A, VGS=-10V, RG=15Ω

*Qg

-

20.5

-

*Qgs

-

6.4

-

*Qgd

-

6.3

-

nC

VDS=-15V, ID=-7.6A, VGS=-4.5V

Body Diode

*IS

-

-2.1

*ISM

-

-8.4

A

*VSD

-

-0.72

-1

V

VGS=0V, IS=-1A

*trr

-

14.2

-

ns

*Qrr

-

6.6

-

nC

IF=-1A, VGS=0V, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

Аналогичный номер детали - MTB012C04Q8-0-T3-G

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Аналогичное описание - MTB012C04Q8-0-T3-G

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MTB012C04Q8-0-T3-G датащи(PDF) 3 Page - Cystech Electonics Corp.

MTB012C04Q8-0-T3-G датащи(HTML) 3 Page - Cystech Electonics Corp.

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