KTA1666 datasheet(1/4 Pages) BILIN

номер детали	KTA1666

подробное описание детали	PNP Silicon Epitaxial Planar Transistor

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производитель	BILIN [Galaxy Semi-Conductor Holdings Limited]

домашняя страница	http://www.galaxycn.com

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Production specification

PNP Silicon Epitaxial Planar Transistor

KTA1666

E001

www.gmicroelec.com

Rev.A

1

FEATURES

High speed switching time.

Low saturation voltage:VCE(sat)=-0.5V(Max)

PC=1~2W(Mounted on ceramic substrate)

Small flat package.

Complementary: KTC4379.

APPLICATIONS

Power amplifier application.

SOT-89

Power switching application.

ORDERING INFORMATION

Type No.

Marking

Package Code

KTA1666

WO/WY

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-2

A

IB

Base Current

-0.4

A

PC

Collector Dissipation

500

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55 to +150

℃

Pb

Lead-free

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Аналогичное описание - KTA1666

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