2SA1203 datasheet(2/4 Pages) BILIN

номер детали	2SA1203

подробное описание детали	Silicon Planar Epitaxial Transistor

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производитель	BILIN [Galaxy Semi-Conductor Holdings Limited]

домашняя страница	http://www.galaxycn.com

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Production specification

Silicon Planar Epitaxial Transistor

2SA1203

E038

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-emitter breakdown voltage V(BR)CEO

IC=-10mA,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V,IC=-500mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A,IB=-0.03A

-2

V

Base-emitter

VBE

VCE=-2V,IC=-500mA

-1

Transition frequency

fT

VCE=-2V, IC=-500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

50

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

Marking

HO1

HY1

Аналогичный номер детали - 2SA1203

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