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STP20N90K5 датащи(PDF) 4 Page - STMicroelectronics

номер детали STP20N90K5
подробное описание детали  N-channel 900 V, 0.21typ., 20 A MDmesh??K5 Power MOSFET in a TO-220 package
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производитель  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics
STP20N90K5
4/13
DocID029148 Rev 3
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
900
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 900 V
1
µA
VGS = 0 V, VDS = 900 V
TC = 125 °C(1)
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 10 A
0.21
0.25
Notes:
(1) Defined by design, not subject to production test
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
1500
-
pF
Coss
Output capacitance
-
120
-
pF
Crss
Reverse transfer capacitance
-
1
-
pF
Co(er)(1)
Equivalent capacitance time
related
VDS = 0 to 720 V,
VGS = 0 V
-
78
-
pF
Co(tr)(2)
Equivalent capacitance energy
related
220
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
3.7
-
Qg
Total gate charge
VDD = 720 V, ID = 20 A
VGS= 10 V
(see Figure 14: "Test
circuit for gate charge
behavior")
-
40
-
nC
Qgs
Gate-source charge
-
14
-
nC
Qgd
Gate-drain charge
-
17
-
nC
Notes:
(1)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.
(2)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.


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