поискавой системы для электроныых деталей |
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STW8N90K5 датащи(PDF) 3 Page - STMicroelectronics |
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STW8N90K5 датащи(HTML) 3 Page - STMicroelectronics |
3 / 12 page STW8N90K5 Electrical ratings DocID030092 Rev 1 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID(1) Drain current (continuous) at TC = 25 °C 8 A ID(1) Drain current (continuous) at TC = 100 °C 5 A ID(2) Drain current pulsed 32 A PTOT Total dissipation at TC = 25 °C 130 W dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 TJ Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by safe operating area (3)ISD ≤ 8 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS (4)VDS ≤ 720 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.96 °C/W Rthj-amb Thermal resistance junction-ambient 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) 2.7 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 250 mJ |
Аналогичный номер детали - STW8N90K5 |
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Аналогичное описание - STW8N90K5 |
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