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STP10N95K5 датащи(PDF) 4 Page - STMicroelectronics |
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STP10N95K5 датащи(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 4/22 DocID024850 Rev 3 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 950 V I DSS Zero gate voltage, V GS = 0 drain current V DS = 950 V 1 μA V DS = 950 V, T C =125 °C 50 μA I GSS Gate-body leakage current V GS = ± 20 V; V DS =0 ±10 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 100 μA 345 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 4 A 0.65 0.8 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =100 V, f=1 MHz, V GS =0 -630 - pF C oss Output capacitance - 50 - pF C rss Reverse transfer capacitance -0.6 - pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V GS = 0, V DS = 0 to 760 V -77 - pF C o(er) (2) 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -28 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Q g Total gate charge V DD = 760 V, I D = 8 A V GS =10 V (see Figure 20) -22 - nC Q gs Gate-source charge - 5 - nC Q gd Gate-drain charge - 15 - nC |
Аналогичный номер детали - STP10N95K5 |
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Аналогичное описание - STP10N95K5 |
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