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STP10N95K5 датащи(PDF) 4 Page - STMicroelectronics

номер детали STP10N95K5
подробное описание детали  Switching applications
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Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
4/22
DocID024850 Rev 3
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
950
V
I
DSS
Zero gate voltage, V
GS
= 0
drain current
V
DS
= 950 V
1
μA
V
DS
= 950 V, T
C
=125 °C
50
μA
I
GSS
Gate-body leakage
current
V
GS
= ± 20 V; V
DS
=0
±10
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 μA
345
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 4 A
0.65
0.8
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-630
-
pF
C
oss
Output capacitance
-
50
-
pF
C
rss
Reverse transfer
capacitance
-0.6
-
pF
C
o(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related
V
GS
= 0, V
DS
= 0 to 760 V
-77
-
pF
C
o(er)
(2)
2.
energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy related
-28
-
pF
R
G
Intrinsic gate resistance
f = 1 MHz open drain
-
6.5
-
Ω
Q
g
Total gate charge
V
DD
= 760 V, I
D
= 8 A
V
GS
=10 V
(see Figure 20)
-22
-
nC
Q
gs
Gate-source charge
-
5
-
nC
Q
gd
Gate-drain charge
-
15
-
nC


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