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STP26NM60ND датащи(PDF) 3 Page - STMicroelectronics

номер детали STP26NM60ND
подробное описание детали  Low input capacitance and gate charge
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производитель  STMICROELECTRONICS [STMicroelectronics]
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DocID025283 Rev 1
3/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical ratings
23
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK, TO-220,
TO-247
TO-220FP
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
21
21(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
13
13(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
84
84(1)
A
PTOT
Total dissipation at TC = 25 °C
190
35
W
dv/dt(3)
3.
ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
dv/dt(4)
4.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
40
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Tstg
Storage temperature
–55 to 150
°C
TJ
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220FP
TO-220
TO-247
Rthj-case
Thermal resistance junction-
case max
0.66
3.57
0.66
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
62.5
50
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-
pcb max
30
°C/W


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