STP6N65M2 datasheet(5/18 Pages) STMICROELECTRONICS

номер детали	STP6N65M2

подробное описание детали	Extremely low gate charge

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STF6N65M2, STP6N65M2, STU6N65M2

Electrical characteristics

18

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

4

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

16

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 4 A, VGS = 0

-

1.6

V

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 17)

-

260

ns

Qrr

Reverse recovery charge

-

1.2

µC

IRRM

Reverse recovery current

-

9.2

A

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 17)

-

400

ns

Qrr

Reverse recovery charge

-

1.84

µC

IRRM

Reverse recovery current

-

9.1

A

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