STP150N10F7 datasheet(6/15 Pages) STMICROELECTRONICS

номер детали	STP150N10F7

подробное описание детали	High avalanche ruggedness

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Electrical characteristics

STI150N10F7, STP150N10F7

6/15

DocID024552 Rev 4

2.1

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage

Figure 7. Static drain-source on-resistance

ID

10

1

0.1

1

VDS(V)

10

(A)

Operation

in

this

area

is

Limited

by

max

R

DS(on)

10ms

1ms

100

µs

0.1

Tj=175°C

Tc=25°C

Single pulse

100

AM18051v1

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10

tp(s)

-4

10

-3

10

-1

10

-5

10

-2

10

-2

10

-1

10

0

c

AM18052v1

ID

250

150

50

0

2

VDS(V)

4

(A)

6

350

400

5V

6V

VGS=10V

100

200

300

7V

8V

8

AM18042v1

ID

300

200

100

0

4

VGS(V)

8

(A)

2

6

50

150

250

VDS=4V

AM18043v1

VGS

6

4

2

0

40

Qg(nC)

(V)

120

8

80

10

VDD=50V

ID=110A

12

AM18044v1

RDS(on)

3.57

3.56

3.55

0

20

ID(A)

(m

Ω)

40

3.58

VGS=10V

60

80

3.59

3.60

3.61

100

3.62

AM18054v1

Аналогичный номер детали - STP150N10F7

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	STP150N10F7	245Kb / 2P	isc N-Channel MOSFET Transistor
SHENZHEN DOINGTER SEMIC...	STP150N10F7	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
STMicroelectronics	STP150N10F7AG	227Kb / 12P	Automotive N-channel 100 V, 4.2 m廓 typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package July 2021

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Аналогичное описание - STP150N10F7

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STP150N10F7 датащи(PDF) 6 Page - STMicroelectronics

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Аналогичный номер детали - STP150N10F7

Аналогичное описание - STP150N10F7

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