STGB15H60DF datasheet(6/23 Pages) STMICROELECTRONICS

номер детали	STGB15H60DF

подробное описание детали	Trench gate field-stop IGBT, H series 600 V, 15 A high speed

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Electrical characteristics

STGB15H60DF, STGF15H60DF, STGP15H60DF

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DocID025113 Rev 2

Table 8. Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 15 A

IF = 15 A, TJ = 175 °C

-

1.8

1.3

2.2

V

trr

Reverse recovery time

Vr = 60 V; IF = 15 A;

diF/dt = 100 A / µs

-

103

ns

Qrr

Reverse recovery charge

-

128

nC

Irrm

Reverse recovery current

-

2.5

A

trr

Reverse recovery time

Vr = 60 V; IF = 15 A;

diF/dt = 100 A / µs

TJ = 175 °C

-

182

ns

Qrr

Reverse recovery charge

-

437

nC

Irrm

Reverse recovery current

-

4.8

A

Аналогичный номер детали - STGB15H60DF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low loss November 2015 Rev 2
	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Rev 4 May 2017
	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Rev 4 May 2017

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Аналогичное описание - STGB15H60DF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGWT15H60F	845Kb / 15P	Trench gate field-stop IGBT, H series 600 V, 15 A high speed February 2017
	STGB5H60DF	872Kb / 30P	Trench gate field-stop IGBT, H series 600 V, 5 A high speed May 2015 Rev 3
	STGB7H60DF	985Kb / 25P	Trench gate field-stop IGBT, H series 600 V, 7 A high speed June 2015 Rev 2
	STGB10H60DF	1Mb / 24P	Trench gate field-stop IGBT, H series 600 V, 10 A high speed October 2013 Rev 2
	STGW15H120DF2	832Kb / 18P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed March 2015 Rev 5
	STGW15H120F2	801Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed April 2015 Rev 5
	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
	STGW20H60DF	1Mb / 17P	600 V, 20 A high speed trench gate field-stop IGBT June 2013 Rev 1
	STGB20H60DF	1Mb / 22P	600 V, 20 A high speed trench gate field-stop IGBT
	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1

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Аналогичный номер детали - STGB15H60DF

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