STGB30V60DF datasheet(2/22 Pages) STMICROELECTRONICS

номер детали	STGB30V60DF

подробное описание детали	Low thermal resistance

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Electrical ratings

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF

2/22

DocID024361 Rev 4

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

CES

Collector-emitter voltage (V

GE

= 0)

600

V

I

C

Continuous collector current at T

C

= 25 °C

60

A

I

C

Continuous collector current at T

C

= 100 °C

30

A

I

CP

(1)

1.

Pulse width limited by maximum junction temperature.

Pulsed collector current

120

A

V

GE

Gate-emitter voltage

±20

V

I

F

Continuous forward current at T

C

= 25 °C

60

A

I

F

Continuous forward current at T

C

= 100 °C

30

A

I

FP

(1)

Pulsed forward current

120

A

P

TOT

Total dissipation at T

C

= 25 °C

258

W

T

STG

Storage temperature range

- 55 to 150

°C

T

J

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thJC

Thermal resistance junction-case IGBT

0.58

°C/W

R

thJC

Thermal resistance junction-case diode

2.08

°C/W

R

thJA

Thermal resistance junction-ambient

50

°C/W

Аналогичный номер детали - STGB30V60DF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGB30V60F	1Mb / 19P	Low thermal resistance April 2014 Rev 4

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Аналогичное описание - STGB30V60DF

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