STGW60H65DFB datasheet(7/19 Pages) STMICROELECTRONICS

номер детали	STGW60H65DFB

подробное описание детали	Low thermal resistance

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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7 / 19 page

DocID024365 Rev 7

7/19

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Electrical characteristics

Figure 8. VCE(sat) vs. collector current

Figure 9. Forward bias safe operating area

VCE(sat)

1.4

1.2

020

IC(A)

(V)

40

60

80

2.2

2.0

1.8

1.6

VGE= 15V

TJ= 175°C

TJ= 25°C

TJ= -40°C

2.4

100

GIPD270820131423FSR

Figure 10. Diode VF vs. forward current

Figure 11. Normalized V(BR)CES vs. junction

temperature

V(BR)CES

(norm)

1.1

1.0

0.9

-50

TJ(°C)

0

50

100

150

IC= 2mA

GIPD280820131415FSR

Figure 12. Normalized VGE(th) vs. junction

temperature

Figure 13. Gate charge vs. gate-emitter voltage

VGE(th)

(norm)

0.8

0.7

0.6

-50

TJ(°C)

0

50

100

150

0.9

1.0

IC= 1mA

GIPD280820131503FSR

VGE

(V)

4

2

0

Qg(nC)

50 100

150 200

6

8

250 300

350

10

12

14

VCC= 520V, IC= 60A,

IG= 1mA

GIPD280820131507FSR

Аналогичный номер детали - STGW60H65DFB

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT DS11665 - Rev 3 - June 2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019

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STGW60H65DFB датащи(PDF) 7 Page - STMicroelectronics

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Аналогичный номер детали - STGW60H65DFB

Аналогичное описание - STGW60H65DFB

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