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L6395 датащи(PDF) 11 Page - STMicroelectronics |
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L6395 датащи(HTML) 11 Page - STMicroelectronics |
11 / 16 page DocID024048 Rev 2 11/16 L6395 Bootstrap driver 16 7 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished using a high voltage fast recovery diode (Figure 6). In the L6395 device a patented integrated structure replaces the external diode. It is implemented using a high voltage DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as shown in Figure 7. An internal charge pump provides the DMOS driving voltage. CBOOT selection and charging To select the proper CBOOT value the external MOS can be seen as an equivalent capacitor. This capacitor CEXT is related to the MOS total gate charge: Equation 1 The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss. It must be: Equation 2 E.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop is 300 mV. If HVG needs to be supplied for an extended period, the CBOOT selection has to take into account also the leakage and quiescent losses. E.g.: HVG steady state consumption is lower than 220 A, so if HVG TON is 5 ms, CBOOT must supply 1.1 C to CEXT. This charge on a 1 F capacitor means a voltage drop of 1.1 V. The internal bootstrap driver offers some important advantages: the external fast recovery diode can be avoided (it usually has a high leakage current). This structure can work only if VOUT is close to GND (or lower) and, at the same time, the LVG is on. The charging time (Tcharge) of the CBOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS RDS(on) (typical value: 120 ). At low switching frequency, this drop can be neglected but, operating at high switching frequency, it should be taken into account. The following equation is useful to compute the drop on the bootstrap DMOS: Equation 3 where Qgate is the gate charge of the external power MOSFET, RDS(on) is the on-resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor. CEXT Qgate Vgate --------------- = CBOOT CEXT » Vdrop Ich e arg RDS on Vdrop Qgate Tch e arg ------------------- RDS on = = |
Аналогичный номер детали - L6395 |
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Аналогичное описание - L6395 |
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