поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

L6395 датащи(PDF) 11 Page - STMicroelectronics

номер детали L6395
подробное описание детали  Industrial drives and fans
Download  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6395 датащи(HTML) 11 Page - STMicroelectronics

Back Button L6395 Datasheet HTML 7Page - STMicroelectronics L6395 Datasheet HTML 8Page - STMicroelectronics L6395 Datasheet HTML 9Page - STMicroelectronics L6395 Datasheet HTML 10Page - STMicroelectronics L6395 Datasheet HTML 11Page - STMicroelectronics L6395 Datasheet HTML 12Page - STMicroelectronics L6395 Datasheet HTML 13Page - STMicroelectronics L6395 Datasheet HTML 14Page - STMicroelectronics L6395 Datasheet HTML 15Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 16 page
background image
DocID024048 Rev 2
11/16
L6395
Bootstrap driver
16
7
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished using a high voltage fast recovery diode (Figure 6). In the L6395 device
a patented integrated structure replaces the external diode. It is implemented using a high
voltage DMOS, driven synchronously with the low-side driver (LVG), with a diode in series,
as shown in Figure 7. An internal charge pump provides the DMOS driving voltage.
CBOOT selection and charging
To select the proper CBOOT value the external MOS can be seen as an equivalent capacitor.
This capacitor CEXT is related to the MOS total gate charge:
Equation 1
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage
loss.
It must be:
Equation 2
E.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop is
300 mV.
If HVG needs to be supplied for an extended period, the CBOOT selection has to take into
account also the leakage and quiescent losses.
E.g.: HVG steady state consumption is lower than 220
A, so if HVG TON is 5 ms, CBOOT
must supply 1.1
C to CEXT. This charge on a 1 F capacitor means a voltage drop of 1.1 V.
The internal bootstrap driver offers some important advantages: the external fast recovery
diode can be avoided (it usually has a high leakage current).
This structure can work only if VOUT is close to GND (or lower) and, at the same time, the
LVG is on. The charging time (Tcharge) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDS(on) (typical value:
120
). At low switching frequency, this drop can be neglected but, operating at high
switching frequency, it should be taken into account.
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 3
where Qgate is the gate charge of the external power MOSFET, RDS(on) is the on-resistance
of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor.
CEXT
Qgate
Vgate
---------------
=
CBOOT CEXT
»
Vdrop
Ich e
arg
RDS on

Vdrop
Qgate
Tch e
arg
------------------- RDS on

=
=


Аналогичный номер детали - L6395

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
L6390 STMICROELECTRONICS-L6390 Datasheet
473Kb / 22P
   High-voltage high and low side driver
L6390D STMICROELECTRONICS-L6390D Datasheet
473Kb / 22P
   High-voltage high and low side driver
L6390D013TR STMICROELECTRONICS-L6390D013TR Datasheet
473Kb / 22P
   High-voltage high and low side driver
L6390 STMICROELECTRONICS-L6390_12 Datasheet
725Kb / 26P
   High-voltage high/low-side driver
L6391 STMICROELECTRONICS-L6391 Datasheet
559Kb / 21P
   High-voltage high and low side driver
More results

Аналогичное описание - L6395

производительномер деталидатащиподробное описание детали
logo
Vincotech
V23990-P543-X3X-D4-14 VINCOTECH-V23990-P543-X3X-D4-14 Datasheet
788Kb / 23P
   Industrial drives Embedded drives
V23990-P541-X2X-D4-14 VINCOTECH-V23990-P541-X2X-D4-14 Datasheet
977Kb / 23P
   Industrial drives Embedded drives
V23990-P543-X2X-D4-14 VINCOTECH-V23990-P543-X2X-D4-14 Datasheet
922Kb / 23P
   Industrial drives Embedded drives
V23990-P545-X2X-D4-14 VINCOTECH-V23990-P545-X2X-D4-14 Datasheet
880Kb / 23P
   Industrial drives Embedded drives
V23990-P545-X3X-D4-14 VINCOTECH-V23990-P545-X3X-D4-14 Datasheet
898Kb / 23P
   Industrial drives Embedded drives
V23990-P546-X2X-D5-14 VINCOTECH-V23990-P546-X2X-D5-14 Datasheet
811Kb / 23P
   Industrial drives Embedded drives
V23990-P588-X88-D1-14 VINCOTECH-V23990-P588-X88-D1-14 Datasheet
1Mb / 23P
   Industrial drives embedded drives
V23990-P589-X4X-D2-14 VINCOTECH-V23990-P589-X4X-D2-14 Datasheet
1Mb / 23P
   Industrial drives Embedded Drives
V23990-P541-X3X-D4-14 VINCOTECH-V23990-P541-X3X-D4-14 Datasheet
770Kb / 23P
   Industrial drives Embedded drives
V23990-P588-X4X-D2-14 VINCOTECH-V23990-P588-X4X-D2-14 Datasheet
1Mb / 23P
   Industrial drives mbedded drives
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com