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STGW80H65DFB датащи(PDF) 4 Page - STMicroelectronics |
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STGW80H65DFB датащи(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST- 4/22 DocID024366 Rev 6 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 80 A 1.6 2 V VGE = 15 V, IC = 80 A TJ = 125 °C 1.8 VGE = 15 V, IC = 80 A TJ = 175 °C 1.9 VF Forward on-voltage IF = 80 A 1.9 2.3 V IF = 80 A TJ = 125 °C 1.6 IF = 80 A TJ = 175 °C 1.5 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 650 V 100 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 10524 - pF Coes Output capacitance - 385 - Cres Reverse transfer capacitance -215 - Qg Total gate charge VCC = 520 V, IC = 80 A, VGE = 15 V, see Figure 29 -414 - nC Qge Gate-emitter charge - 78 - Qgc Gate-collector charge - 170 - |
Аналогичный номер детали - STGW80H65DFB |
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Аналогичное описание - STGW80H65DFB |
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