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STGW80H65DFB датащи(PDF) 4 Page - STMicroelectronics

номер детали STGW80H65DFB
подробное описание детали  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Electrical characteristics
STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST-
4/22
DocID024366 Rev 6
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
650
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 80 A
1.6
2
V
VGE = 15 V, IC = 80 A
TJ = 125 °C
1.8
VGE = 15 V, IC = 80 A
TJ = 175 °C
1.9
VF
Forward on-voltage
IF = 80 A
1.9
2.3
V
IF = 80 A TJ = 125 °C
1.6
IF = 80 A TJ = 175 °C
1.5
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
100
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-
10524
-
pF
Coes
Output capacitance
-
385
-
Cres
Reverse transfer
capacitance
-215
-
Qg
Total gate charge
VCC = 520 V, IC = 80 A,
VGE = 15 V, see Figure 29
-414
-
nC
Qge
Gate-emitter charge
-
78
-
Qgc
Gate-collector charge
-
170
-


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