поискавой системы для электроныых деталей |
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STU7N105K5 датащи(PDF) 3 Page - STMicroelectronics |
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STU7N105K5 датащи(HTML) 3 Page - STMicroelectronics |
3 / 18 page STP7N105K5, STU7N105K5, STW7N105K5 Electrical ratings DocID026183 Rev 2 3/18 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 4 A ID Drain current (continuous) at TC = 100 °C 3 A IDM(1) Drain current (pulsed) 16 A PTOT Total dissipation at TC = 25 °C 110 W IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAR, VDD= 50 V) 132 mJ dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tj Operating junction temperature range - 55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 4 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS ; VSD ≤ 840 V (3)VDS ≤ 840 V Table 3: Thermal data Symbol Parameter Value Unit TO-220 IPAK TO-247 Rthj-case Thermal resistance junction-case max 1.14 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 100 50 °C/W |
Аналогичный номер детали - STU7N105K5 |
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Аналогичное описание - STU7N105K5 |
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