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TPA2011D1 датащи(PDF) 5 Page - Texas Instruments |
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TPA2011D1 датащи(HTML) 5 Page - Texas Instruments |
5 / 32 page TPA2011D1 www.ti.com SLOS626B – DECEMBER 2009 – REVISED NOVEMBER 2015 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±1000 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN MAX UNIT VDD Class-D supply voltage 2.5 5.5 V VIH High-level input voltage EN 1.3 V VIL Low-level input voltage EN 0.35 V RI Input resistor Gain ≤ 20 V/V (26 dB) 15 k Ω VIC Common mode input voltage range VDD = 2.5V, 5.5V, CMRR ≥ 49 dB 0.75 VDD-1.1 V TA Operating free-air temperature –40 85 °C 7.4 Thermal Information TPA2011D1 THERMAL METRIC(1) YFF (DSBGA) UNIT 9 PINS RθJA Junction-to-ambient thermal resistance 107 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.9 °C/W RθJB Junction-to-board thermal resistance 18.1 °C/W ψJT Junction-to-top characterization parameter 3.8 °C/W ψJB Junction-to-board characterization parameter 18 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output offset voltage (measured |VOS| VI = 0 V, AV = 2 V/V, VDD = 2.5 V to 5.5 V 1 5 mV differentially) |IIH| High-level input current VDD = 5.5 V, VEN = 5.5 V 50 μA |IIL| Low-level input current VDD = 5.5 V, VEN = 0 V 1 μA VDD = 5.5 V, no load 1.8 2.5 I(Q) Quiescent current VDD = 3.6 V, no load 1.5 2.3 mA VDD = 2.5 V, no load 1.3 2.1 I(SD) Shutdown current VEN = 0.35 V, VDD = 2.5 V to 5.5 V 0.1 2 μA RO, SD Output impedance in shutdown mode VEN = 0.35 V 2 k Ω f(SW) Switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz AV Gain VDD = 2.5 V to 5.5 V, RI in kΩ 285/RI 300/RI 315/RI V/V REN Resistance from EN to GND 300 k Ω Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPA2011D1 |
Аналогичный номер детали - TPA2011D1_17 |
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Аналогичное описание - TPA2011D1_17 |
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