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TPA3111D1PWP датащи(PDF) 5 Page - Texas Instruments |
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TPA3111D1PWP датащи(HTML) 5 Page - Texas Instruments |
5 / 31 page 5 TPA3111D1 www.ti.com SLOS618F – AUGUST 2009 – REVISED JULY 2016 Product Folder Links: TPA3111D1 Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage PVCC, AVCC 8 26 V VIH High-level input voltage SD, GAIN0, GAIN1 2 V VIL Low-level input voltage SD, GAIN0, GAIN1 0.8 V VOL Low-level output voltage FAULT, RPULLUP = 100 kΩ, VCC = 26 V 0.8 V IIH High-level input current SD, GAIN0, GAIN1, VI = 2 V, VCC = 18 V 50 µA IIL Low-level input current SD, GAIN0, GAIN1, VI = 0.8 V, VCC = 18 V 5 µA (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator. 6.4 Thermal Information THERMAL METRIC(1)(2) TPA3111D1 UNIT PWP (HTSSOP) 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W 6.5 DC Characteristics – VCC = 24 V TA = 25°C, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT |VOS| Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 36 dB 1.5 15 mA ICC Quiescent supply current SD = 2 V, no load, PVCC = 21 V 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 21 V 400 µA RDS(ON) Drain-source ON-state resistance IO = 500 mA, TJ = 25°C High side 240 mΩ Low side 240 G Gain VGAIN1 = 0.8 V VGAIN0 = 0.8 V 19 20 21 dB VGAIN0 = 2 V 25 26 27 VGAIN1 = 2 V VGAIN0 = 0.8 V 31 32 33 VGAIN0 = 2 V 35 36 37 tON Turnon time VSD = 2 V 10 ms tOFF Turnoff time VSD = 0.8 V 2 µs VGVDD Gate drive supply IGVDD = 2 mA 6.5 6.9 7.3 V 6.6 DC Characteristics – VCC = 12 V TA = 25°C, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT |VOS| Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 36 dB 1.5 15 mA ICC Quiescent supply current SD = 2 V, no load, PVCC = 12 V 20 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 12 V 200 µA RDS(ON) Drain-source ON-state resistance IO = 500 mA, TJ = 25°C High side 240 mΩ Low side 240 |
Аналогичный номер детали - TPA3111D1PWP |
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Аналогичное описание - TPA3111D1PWP |
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