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STB6NM60N датащи(PDF) 3 Page - STMicroelectronics

номер детали STB6NM60N
подробное описание детали  N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STx6NM60N
Electrical ratings
3/19
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, D²PAK,
DPAK, IPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
4.6
4.6 (1)
1.
Limited by maximum temperature allowed
A
ID
Drain current (continuous) at
TC = 100 °C
2.9
2.9 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
18.4
18.4 (1)
A
PTOT
Total dissipation at TC = 25 °C
45
20
W
dv/dt (3)
3.
ISD ≤ 4.6A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 IPAK DPAK
D²PA
K
TO-
220FP
Rthj-case Thermal resistance junction-case
2.78
5
°C/W
Rthj-amb Thermal resistance junction-amb
62.5
100
62.5
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
2A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50 V)
65
mJ
Obsolete
Product(s)
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