поискавой системы для электроныых деталей |
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TS110-8 датащи(PDF) 3 Page - STMicroelectronics |
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TS110-8 датащи(HTML) 3 Page - STMicroelectronics |
3 / 10 page DocID026589 Rev 1 3/10 TS110-8 Characteristics 10 Table 4. Static electrical characteristics Symbol Test conditions Value Unit VTM ITM = 2.5 A, tp = 380 µs Tj = 25 °C Max. 1.6 V VT0 Threshold voltage Tj = 125 °C Max. 0.95 V RD Dynamic resistance Tj = 125 °C Max. 220 m Ω IDRM IRRM VD = VDRM / VRRM, RGK = 220 Ω Tj = 25 °C Max. 1µA Tj = 125 °C 100 µA Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-l) Junction to leads (DC) TO-92 65 °C/W Rth(j-a) Junction to ambient (DC) TO-92 160 S = 5 cm2 SMBflat-3L 75 Rth(j-c) Junction to case (DC) SMBflat-3L 14 Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and DC on-state current versus lead temperature (TO-92) Figure 3. Average and DC on-state current versus case temperature (SMBflat-3L) Figure 4. Average and DC on-state current versus ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 SMBflat-3L I (A) T(AV) a = 30°, 60°, 90°, 120°, 180°, DC T (°C) c |
Аналогичный номер детали - TS110-8 |
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Аналогичное описание - TS110-8 |
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