ST2S06 datasheet(7/18 Pages) STMICROELECTRONICS

номер детали	ST2S06

подробное описание детали	Synchronous rectification

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DocID13866 Rev 6

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ST2S06

Electrical characteristics

18

VIN_SW = VIN_A = 5 V, VO1,2 =1.2 V, C1= 4.7 µF, C2 = C3 = 22 µF, L1 = L2 = 3.3 µH,

TJ = -30 to 125 °C unless otherwise specified. Typical values are referred to 25 °C.

Table 7. Electrical characteristics for the ST2S06B

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

FB1,2

Feedback voltage

784

800

816

mV

IFB1,2

VFB pin bias current

VFB = 1 V

600

nA

IQ

Quiescent current

VINH > 1.2 V, VFB = 1 V

1

mA

VINH < 0.4 V

1

µA

IO1,2

Output current

VIN = 2.5 to 5.5 V

(1)

0.8

A

IMIN

Minimum output current

1

mA

VINH

Inhibit threshold

2.5V < VIN < 5 V

1.2

2.5V < VIN < 5.5 V

1.3

V

Device OFF

0.4

IINH1,2

Inhibit pin current

2

µA

%VO1,2/

V

IN

Reference line regulation

2.5V < VIN < 5.5 V

0.032

%VO/

VIN

V

O1,2

Reference load regulation

10 mA < IO < 0.5 A

5.5

15

mV

PWM fS

PWM switching

frequency(1)

VFB = 0.7 V, TA = 25°C

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

VFB = 0.7 V, TA = 25°C

85

94

%

ISWL

Switching current limitation

1

1.2

A

ILKN

NMOS leakage current

VFB = 0.9 V, TA = 25°C

0.1

µA

ILKP

PMOS leakage current

VFB = 0.9 V, TA = 25°C

0.1

µA

RDSon-N

NMOS switch on resistance ISW = 250 mA

0.15

0.3

W

RDSon-P

PMOS switch on resistance ISW = 250 mA

0.2

0.4

W



Efficiency

IO = 20 mA to 100 mA

75

%

IO = 100 mA to 0.5 A

90

%

TSHDN

Thermal shut down (2)

130

150

°C

THYS

Thermal shut down

hysteresis (1)

15

°C

V

O1,2/IO

Load transient response (1)

100 mA < IO < 500 mA,

tR = tF1 => 100 ns, TA = 25°C

-5

+5

%VO

1.

VO= 90% of nominal value.

2.

Guaranteed by design, but not tested in production.

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