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VMMK-2503 датащи(PDF) 2 Page - Broadcom Corporation.

номер детали VMMK-2503
подробное описание детали  1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
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производитель  BOARDCOM [Broadcom Corporation.]
домашняя страница  http://www.broadcom.com
Logo BOARDCOM - Broadcom Corporation.

VMMK-2503 датащи(HTML) 2 Page - Broadcom Corporation.

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Table 1. Absolute Maximum Ratings [1]
Sym
Parameters/Condition
Unit
Absolute Max
Vd
Supply Voltage (RF Output) [2]
V
6
Id
Device Current [2]
mA
120
Pin, max
CW RF Input Power (RF Input) [3]
dBm
+20
Pdiss
Total Power Dissipation
mW
720
Tch
Max channel temperature
°C
150
θjc
Thermal Resistance [4]
°C/W
140
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device.
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = 50Ω (unless otherwise specified)
Sym
Parameters/Condition
Unit
Minimum
Typ.
Maximum
Id
Device Current
mA
46
68
88
NF[1,2]
Noise Figure
dB
3.04
4.1
Ga [1,2]
Associated Gain
dB
12.5
13.5
18
OIP3 [1,2,3]
Output 3rd Order Intercept
dBm
+27
P-1dB[1,2]
Output Power at 1dB
Gain Compression
dBm
+17
IRL [1,2]
Input Return Loss
dB
-14
ORL [1,2]
Output Return Loss
dB
-20
Notes:
1. Losses of test systems have been de-embedded from final data
2. Measure Data obtained from wafer-probing
3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm


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