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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS61161DRVT датащи(PDF) 6 Page - Texas Instruments |
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TPS61161DRVT датащи(HTML) 6 Page - Texas Instruments |
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6 / 39 page  6 TPS61160, TPS61161 SLVS791E – NOVEMBER 2007 – REVISED JULY 2016 www.ti.com Product Folder Links: TPS61160 TPS61161 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated 6.5 Electrical Characteristics VIN = 3.6 V, CTRL = VIN, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage 2.7 18 V IQ Operating quiescent current into VIN Device PWM switching no load 1.8 mA ISD Shutdown current CRTL=GND, VIN = 4.2 V 1 μA UVLO Undervoltage lockout threshold VIN falling 2.2 2.5 V Vhys Undervoltage lockout hysterisis 70 mV ENABLE AND REFERENCE CONTROL V(CTRLh) CTRL logic high voltage VIN = 2.7 V to 18 V 1.2 V V(CTRLl) CTRL logic low voltage VIN = 2.7 V to 18 V 0.4 V R(CTRL) CTRL pull down resistor 400 800 1600 k Ω VOLTAGE AND CURRENT CONTROL VREF Voltage feedback regulation voltage 196 200 204 mV V(REF_PWM) Voltage feedback regulation voltage under brightness control VFB = 50 mV 47 50 53 mV VFB = 20 mV 17 20 23 IFB Voltage feedback input bias current VFB = 200 mV 2 μA ƒS Oscillator frequency 500 600 700 kHz Dmax Maximum duty cycle VFB = 100 mV, measured on the drive signal of the switching FET 93% 95% tmin_on Minimum on pulse width 40 ns Isink Comp pin sink current 100 μA Isource Comp pin source current 100 μA Gea Error amplifier transconductance 240 320 400 μmho Rea Error amplifier output resistance 6 M Ω ƒea Error amplifier crossover frequency 5 pF connected to COMP 500 kHz POWER SWITCH RDS(on) N-channel MOSFET on-resistance VIN = 3.6 V 0.3 0.6 Ω VIN = 3 V 0.7 ILN_NFET N-channel leakage current VSW = 35 V, TA = 25°C 1 μA |
Аналогичный номер детали - TPS61161DRVT |
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Аналогичное описание - TPS61161DRVT |
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