©2005 Fairchild Semiconductor Corporation

FDD8878 / FDU8878 Rev. A3

January 2005

www.fairchildsemi.com

1

FDD8878 / FDU8878

30V, 40A, 15m

Ω

Features

High performance trench technology for extremely low

Low gate charge

High power and current handling capability

Applications

DC/DC converters

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either

synchronous

or

conventional

switching

PWM

controllers. It has been optimized for low gate charge, low

D

G

S

G DS

I-PAK

(TO-251AA)

G

S

D

TO-252

D-PAK

(TO-252)