поискавой системы для электроныых деталей |
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SZNUP4304MR6T1G датащи(PDF) 2 Page - ON Semiconductor |
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SZNUP4304MR6T1G датащи(HTML) 2 Page - ON Semiconductor |
2 / 6 page NUP4304MR6, SZNUP4304MR6 http://onsemi.com 2 MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM 2.0 1.0 0.5 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient RqJA 556 C/W Lead Solder Temperature Maximum 10 Seconds Duration TL 260 C Junction Temperature TJ −40 to +150 C Storage Temperature Tstg −55 to +150 C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) V(BR) 70 − − Vdc Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR − − − − − − 2.5 30 50 mAdc Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD − 0.8 1.5 pF Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD − 1.6 3 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − − − − − 715 855 1000 1250 mVdc 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. |
Аналогичный номер детали - SZNUP4304MR6T1G |
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Аналогичное описание - SZNUP4304MR6T1G |
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