поискавой системы для электроныых деталей |
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RN1414 датащи(PDF) 1 Page - Toshiba Semiconductor |
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RN1414 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page RN1414 ~RN1418 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Equivalent Circuit and Bias Resister Values Type No. R1 (kΩ) R2 (kΩ) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 4.7 RN1418 47 10 Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1414~1418 VCEO 50 V RN1414 5 RN1415 6 RN1416 7 RN1417 15 Emitter-base voltage RN1418 VEBO 25 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range RN1414~1418 Tstg −55~150 °C JEDEC SC-236MOD EIAJ SC-59 TOSHIBA 2-3F1A Weight: 0.012g Unit: mm |
Аналогичный номер детали - RN1414 |
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Аналогичное описание - RN1414 |
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