TPC8208 datasheet(4/7 Pages) TOSHIBA

номер детали	TPC8208

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TPC8208

2003-02-18

4

ID – VDS

ID – VGS

VDS – VGS

|Yfs| – ID

RDS (ON) – ID

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

Drain current ID (A)

VGS = 1.4 V

0

0.2

0.4

0.6

Common source

Ta

= 25°C

Pulse test

0.8

1

0

2

4

6

8

10

1.9

2.5

2

4

10

3

1.8

1.7

1.6

1.5

0

0.5

1

1.5

2

2.5

2

4

6

8

10

Common source

VDS = 10 V

Pulse test

Ta

= -55°C

100

25

0

2

4

6

8

10

12

0.2

0.4

0.6

0.8

1.0

Common source

Ta

= 25°C

Pulse test

ID = 5 A

2.5

1.2

1

0.1

1

10

100

10

100

1000

VGS = 2.5 V

4

Common source

Ta

= 25°C

Pulse test

0.1

1

10

30

1

10

100

Common source

VDS = 10 V

Pulse test

Ta

= -55°C

100

25

0

4

8

12

16

20

0

0.4

0.8

1.2

1.6

2.0

VGS = 1.4 V

10

5

4

Common

source

Ta

= 25°C

Pulse test

1.8

2.6

3

2.4

2.2

2.0

1.6

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